Characterization of single hard errors (SHE) in 1 M-bit SRAMs from single ion
- 1 December 1994
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (6) , 2235-2239
- https://doi.org/10.1109/23.340568
Abstract
A Single Hard Error (SHE) characterization was performed on two types of 1 Mbit SRAMs:MT5C1008 from MICRON and MSM8128 from HITACHI. On both types, test results showed that one single ion is sufficient to create a stuck bit. An orbit SHE rate calculation showed that the probability to have a stuck bit in space on a single 1 Mbit SRAM is rather low.Keywords
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