AES depth profile study of a GaAs/AlAs superlattice

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Abstract
The width of the interface between sublayers in a GaAs/AIAs superlattice was investigated using AES combined with Ar+ ion sputtering and chemical etching. The factors stipulating the experimental broadening of the interface width were estimated. The real interface width, determined for a GaAs/AIAs superlattice grown by metal organic chemical vapour deposition (MOCVD), did not exceed three AIAs lattice constants. The influence of the sputtering ion beam energy to the experimental interface width, caused by surface roughness, was investigated. It was demonstrated that combination of the initial chemical etching or high‐energy ion sputtering with further low‐energy sputtering allowed deep sub layers to be investigated faster and without loss of depth resolution.