High-efficiency, low-threshold, Zn-diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition
- 1 February 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (3) , 208-210
- https://doi.org/10.1063/1.93042
Abstract
Deep Zn-diffused, 4-μm stripe thin p active layer GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition are reported. Threshold currents as low as 40 mA (length 220 μm), a characteristic temperature as large as 170 °C, and external differential quantum efficiencies as high as 80–90% are obtained. Single longitudinal and transverse mode operation of these lasers is also observed.Keywords
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