Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells

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Abstract
ZnSe thin films were grown on (100) and (111) oriented Si substrates by molecular beam epitaxy. The single‐crystalline ZnSe films were obtained in the substrate temperature range of 300–450 °C. The epitaxial layers were evaluated by reflection high‐energy electron diffraction, x‐ray diffraction, etch pit density, photoluminescence, and Hall effect measurements. Etch pit density was estimated to be 3×105 cm−2. The carrier concentration and electron mobility of the epitaxial ZnSe layers at room temperature are 1.3×1017–2.8×1017 cm−3 and 170–250 cm2/V s, respectively. These epitaxial films were applied to Au/ZnSe:Mn/Si dc‐operated electroluminescent cells. The maximum quantum efficiency of 2.2×10−2 (30.4 V, 6.3×10−5 A/cm2) was achieved.