Fabrication of Photoluminescent Amorphous Pillar Silicon Structures
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Sub-50 nm high aspect-ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion etchingApplied Physics Letters, 1993
- Efficient visible electroluminescence from highly porous silicon under cathodic biasApplied Physics Letters, 1992
- Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous SiApplied Physics Letters, 1992
- Visible light emission at room temperature from anodized plasma-deposited silicon thin filmsApplied Physics Letters, 1992
- Visible light emission at room temperature from partially oxidized amorphous siliconSolid State Communications, 1992
- Direct evidence for the amorphous silicon phase in visible photoluminescent porous siliconApplied Physics Letters, 1992
- Photoluminescence studies on porous siliconApplied Physics Letters, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Current-induced light emission from a porous silicon deviceIEEE Electron Device Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990