Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP quantum well lasers
- 1 May 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 18 (1-2) , 57-74
- https://doi.org/10.1016/0167-9317(92)90122-8
Abstract
No abstract availableKeywords
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