Top-Gate Staggered Amorphous Silicon Thin-Film Transistors: Series Resistance and Nitride Thickness Effects
- 1 November 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (11R)
- https://doi.org/10.1143/jjap.37.5914
Abstract
No abstract availableKeywords
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