Topography development on selected inert gas and self-ion bombarded Si
- 1 July 1995
- Vol. 46 (7) , 637-643
- https://doi.org/10.1016/0042-207x(95)00003-8
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Influence of the composition of the altered layer on the ripple formationJournal of Vacuum Science & Technology A, 1994
- Ripple production induced by oblique incidence ion bombardment of SiVacuum, 1994
- Surface roughness development during sputtering of GaAs and InP: Evidence for the role of surface diffusion in ripple formation and sputter cone developmentJournal of Vacuum Science & Technology A, 1992
- Effect of surface roughening on secondary ion yields and erosion rates of silicon subject to oblique oxygen bombardmentJournal of Vacuum Science & Technology A, 1990
- Improved depth resolution by sample rotation during Auger electron spectroscopy depth profilingThin Solid Films, 1985
- The effect of sample rotation on sputtering induced topography on SiRadiation Effects, 1985
- Surface morphology of Si(100), GaAs(100) and InP(100) following O2+ and Cs+ ion bombardmentVacuum, 1984
- Ion bombardment induced surface topography modification of clean and contaminated single crystal Cu and SiSurface and Interface Analysis, 1982
- The mechanisms of etch pit and ripple structure formation on ion bombarded Si and other amorphous solidsNuclear Instruments and Methods, 1980
- Ion bombardment induced ripple topography on amorphous solidsRadiation Effects, 1977