A study on beryllium-doped AlxGa1 − xAs layers grown by molecular beam epitaxy
- 31 May 1990
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 6 (1) , 43-48
- https://doi.org/10.1016/0921-5107(90)90113-p
Abstract
No abstract availableKeywords
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