In-Situ Tem Characterization of Whiskers on Al Electrodes for Thin-Film Transistors
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Whiskers grown on aluminum thin films during heat treatmentsJournal of Vacuum Science & Technology A, 1996
- The effect of grain orientation on the relaxation of thermomechanical stress and hillock growth in AI-1%Si conductor layers on silicon substratesJournal of Electronic Materials, 1993
- Effects of grain orientation on hillock formation and grain growth in aluminum films on silicon substratesScripta Metallurgica et Materialia, 1992
- Applications of focused ion beam technique to failure analysis of very large scale integrations: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- The effect of laser reflow on the variation of stress with thermal cycling in aluminum thin filmsJournal of Vacuum Science & Technology A, 1991
- A transmission electron microscopy study of hillocks in thin aluminum filmsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Recent Developments in the use of the Tripod Polisher for TEM Specimen PreparationMRS Proceedings, 1991
- Influence of target microstructure on the propensity for whisker growth in sputter-deposited aluminum alloy filmsJournal of Vacuum Science & Technology A, 1989
- Growth of Aluminum Whiskers below the Melting Point of AluminumJapanese Journal of Applied Physics, 1988