The In-Ga-As-Zn system: LPE growth conditions for lattice matching on (111) B InP substrates
- 15 March 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (6) , 454-456
- https://doi.org/10.1063/1.91544
Abstract
Experimental and calculated partial phase diagrams for the In‐Ga‐As‐Zn system are presented. The distribution coefficient for gallium between the solid and liquid phase is found to increase significantly with increasing Zn concentration in the liquid. Growth conditions for Zn‐doped In0.53Ga0.47As layers lattice matched to (111) B InP substrates are determined. Electrical characteristics of the layers are also reported.Keywords
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