Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire
- 23 February 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (8) , 466-468
- https://doi.org/10.1063/1.98175
Abstract
The heteroepitaxial quality of (100) Si films on (11̄02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350 °C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.Keywords
This publication has 6 references indexed in Scilit:
- Use of a rapid anneal to improve CaF2:Si (100) epitaxyApplied Physics Letters, 1985
- Rapid Thermal Annealing in SiMRS Proceedings, 1984
- Optical absorption coefficient of silicon at 1.152 μ at elevated temperaturesApplied Physics Letters, 1982
- Fault-free silicon at the silicon/sapphire interfaceApplied Physics Letters, 1982
- Co60 Radiation Effects on Laser Annealed Silicon on SapphireIEEE Transactions on Nuclear Science, 1981
- A novel three-step process for low-defect-density silicon on sapphireApplied Physics Letters, 1981