Related optical and electrical properties of thin films of indium arsenide

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Abstract
Films of InAs have been prepared by evaporation of the elements, using the `three temperature' method, on to Corning 0211 glass substrates at temperatures from ambient to 630°C, in a range of thicknesses from 01 to 14 μm. Electrical measurements have indicated a dependence of carrier concentration on thickness, but not on substrate temperature; the lowest concentration observed was 9 × 1023 m−3 at the greatest thickness. The mobility was found to increase both with thickness and substrate temperature; a maximum value of 0225 m2V−1s−1 was found. For films prepared on substrates held at temperatures greater than 450°C, optical reflection measurements in the infrared enable plasma data to be obtained by comparison with computed curves. Combining this data with electrical measurements on the same sample gave the variation of effective mass with carrier concentration up to greater concentrations than have been reported for bulk material, a value of m* of012 being obtained for a concentration of 7 × 1025m−3. The changes of mobility in this range were indicated to be due to changes both in the carrier effective mass and in their relaxation times.

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