Selective epitaxial growth of silicon carbide on SiO2 masked Si(100): The effects of temperature
- 1 July 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (1) , 201-204
- https://doi.org/10.1063/1.368017
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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