Self-Convergent Programming Scheme for Multilevel P-Channel Flash Memory

Publisher Website
Google Scholar
Abstract
We propose a novel operation scheme for multilevel p-channel flash memory cell with a self-convergent programming process. By utilizing the simultaneous Fowler-Nordheim electron tunneling out of floating gate and channel hot electron injection into floating gate, the threshold voltage of memory cell can be converged to a specific value. The gate pulse level can be varied to result in different converged threshold voltages such that multilevel can be achieved. Owing to the nature of self-convergence, the possibility of eliminating or reducing the verification operation in multilevel applications increases considerably by using the proposed scheme. In this study the reliability considerations of this programming technique for long-term operations are also addressed.

This publication has 6 references indexed in Scilit: