Molecular beam epitaxial growth of high quality InSb
- 26 December 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (26) , 3338-3340
- https://doi.org/10.1063/1.112384
Abstract
In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x‐ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.Keywords
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