Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates
- 1 March 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (3) , 337-343
- https://doi.org/10.1088/0268-1242/7/3/010
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodesApplied Physics Letters, 1991
- Observation of resonant tunneling in InSb/AlInSb double-barrier structuresApplied Physics Letters, 1991
- Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodesApplied Physics Letters, 1991
- Novel semiconductor materials and structures produced by MBE and MOCVDPhysica Scripta, 1991
- InAs/Ga1−xInxSb strained-layer superlattices grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990
- Doping superlattices based on InSb for mid-infrared detector applicationsApplied Physics Letters, 1990
- MBE growth of strained-layer superlattices and quantum wellsJournal of Crystal Growth, 1989
- Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal-insulator-semiconductor field-effect transistorsJournal of Vacuum Science & Technology B, 1986
- Properties of MBE grown InSb and InSb1−xBixJournal of Vacuum Science & Technology A, 1983
- Growth of Sb and InSb by molecular-beam epitaxyJournal of Applied Physics, 1981