A new physical model for the kink effect on InAlAs/InGaAs HEMTs
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 201-204
- https://doi.org/10.1109/iedm.1995.497214
Abstract
New measurements providing direct evidence linking the kink effect and impact ionization in InAlAs/InGaAs HEMTs are reported. Current kink models are not consistent with our findings. We propose a new mechanism, barrier-induced hole pile-up at the source, to explain the kink. The new model is shown to be consistent with both room temperature and low temperature measurements. These results allow formulation of a simple equivalent circuit model of the kink.Keywords
This publication has 10 references indexed in Scilit:
- Device technologies for InP-based HEMTs and their application to ICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Electroluminescence measurement of InAlAs/InGaAs HEMTs lattice-matched to InP substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- I-V kink in InAlAs/InGaAs MODFETs due to weak impact ionization process in the InGaAs channelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Body contacts in InP-based InAlAs/InGaAs HEMTs andtheir effects on breakdown voltage and kink suppressionElectronics Letters, 1995
- Improved model for kink effect in AlGaAs/InGaAs heterojunction FET'sIEEE Transactions on Electron Devices, 1994
- Impact ionization in InAlAs/InGaAs HFET'sIEEE Electron Device Letters, 1994
- Numerical analysis of kink effect in HJFET with a heterobuffer layerIEEE Transactions on Electron Devices, 1993
- Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulationSolid-State Electronics, 1992
- AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBEIEEE Electron Device Letters, 1989
- Analysis of kink characteristics in Silicon-on-insulator MOSFET's using two-carrier modelingIEEE Transactions on Electron Devices, 1985