Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors

This publication has 15 references indexed in Scilit:

• A study of flicker noise in MOS transistors operated at room and liquid helium temperatures
  Solid-State Electronics, 1990
• A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
  IEEE Transactions on Electron Devices, 1990
• Flicker noise in metal-oxide-semiconductor transistors from liquid helium to room temperature
  Journal of Applied Physics, 1989
• A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon
  IEEE Transactions on Electron Devices, 1989
• On the theory of carrier number fluctuations in MOS devices
  Solid-State Electronics, 1989
• Calculation of Surface Charge Noise at the Si-SiO2 Interface
  Physica Status Solidi (a), 1987
• 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors
  Applied Physics Letters, 1985
• Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states
  IEEE Transactions on Electron Devices, 1984
• 1/f noise in n-channel silicon-gate MOS transistors
  IEEE Transactions on Electron Devices, 1982
• 1/f; noise model for MOSTs biased in nonohmic region
  Solid-State Electronics, 1980