Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered Materials

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Abstract
Nb2O5,Nb2O5, Ta2O5,Ta2O5, and Al2O3Al2O3 solid solutions and nanolaminates were grown using atomic layer deposition technique. Electrical properties of the materials deposited were comparatively characterized by studying the behavior of Al/niobium-aluminum (tantalum) oxide/indium-tin oxide capacitor structures. The films with high Nb content demonstrated high polarizability and leakage current density. The films with high Al content demonstrated low leakage current densities. The leakage currents in Nb-based films were reduced by depositing thin alternate layers of Al2O3Al2O3 or Ta2O5Ta2O5 and Nb2O5,Nb2O5, thereby increasing the number of interfaces between distinct oxide layers. The permittivity of Nb2O5:Al2O3Nb2O5:Al2O3 films could be increased with Nb2O5Nb2O5 concentration without considerable loss in resistivity. © 2001 The Electrochemical Society. All rights reserved.