High-power gain-guided InGaAsP laser array
- 1 November 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (9) , 941-943
- https://doi.org/10.1063/1.95450
Abstract
We have fabricated InGaAsP gain‐guided laser arrays emitting at 1.3 μm. These devices have threshold currents in the range 300–400 mA at 30 °C and have been operated to pulsed output powers as high as 400 mW. More than 100 mW of output power has been obtained up to an ambient temperature of 60 °C. The lasers emit in multilongitudinal modes with a far‐field divergence of 20°×35°. A gain‐guided InGaAsP laser array of the type described here can be used in some applications requiring high‐power lasers emitting at 1.3 μm.Keywords
This publication has 10 references indexed in Scilit:
- Schottky barrier restricted arrays of phase-coupled AlGaAs quantum well lasersApplied Physics Letters, 1984
- Coupled-mode analysis of phase-locked injection laser arraysApplied Physics Letters, 1984
- High-power phase-locked arrays of index-guided diode lasersApplied Physics Letters, 1983
- Optical evaluation of indium gallium arsenide phosphide double-heterostructure material for injection lasersJournal of Applied Physics, 1983
- Effect of auger recombination on the threshold characteristics of gain-guided InGaAsP lasersElectronics Letters, 1983
- Integrated arrays of 1.3-μm buried-crescent lasersApplied Physics Letters, 1983
- Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirrorElectronics Letters, 1983
- Single longitudinal mode operation of high power multiple-stripe injection lasersApplied Physics Letters, 1983
- Focusing of a 7700-Å high power phased array semiconductor laserApplied Physics Letters, 1982
- High power coupled multiple stripe quantum well injection lasersApplied Physics Letters, 1982