Temperature dependence of persistent photo-conductivity due to DX centers in AlxGa1?xAs:Si

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1 May 1990

journal article
research article
Published by Springer Nature in Applied Physics A

Vol. 50 (5) , 515-517
https://doi.org/10.1007/bf00324577

Abstract

No abstract available

Keywords

This publication has 12 references indexed in Scilit:

DXcenter in ${Ga}_{1 - x}$ ${Al}_{x}$ As alloys
Physical Review B, 1989
Conduction-band structure dependence of persistent photoconductivity in Si-doped AlxGa1−xAs studied by Hall measurements under hydrostatic pressure
Applied Physics Letters, 1989
High pressure andDXcenters in heavily doped bulk GaAs
Physical Review B, 1989
The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration
Japanese Journal of Applied Physics, 1989
Effect of local alloy disorder on emission kinetics of deep donors (D X centers) in AlxGa1−xAs of low Al content
Applied Physics Letters, 1988
Theory of the Atomic and Electronic Structure of $DX$ Centers in GaAs and ${Al}_{x} {Ga}_{1 - x} As$ Alloys
Physical Review Letters, 1988
Characterization of the $DX$ center in the indirect ${Al}_{x} {Ga}_{1 - x} As$ alloy
Physical Review B, 1988
Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
Japanese Journal of Applied Physics, 1985
Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
Physical Review Letters, 1977
Long-lifetime photoconductivity effect in n-type GaAlAs
Applied Physics Letters, 1977