Effect of pressure on low-temperature transport in GaAs-Ga0.8In0.2As strained layer superlattices
- 31 August 1985
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 20 (8) , 871-875
- https://doi.org/10.1016/0025-5408(85)90069-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Electron mobilities in In0.2Ga0.8As/GaAs strained-layer superlatticesApplied Physics Letters, 1983
- Quantum oscillations in strained-layer superlatticesPhysical Review B, 1983
- strained-layer superlattices: A proposal for useful, new electronic materialsPhysical Review B, 1983
- Absorption measurements at high pressure on AlAs-AlxGa1−xAs-GaAs superlatticesApplied Physics Letters, 1982
- Strained-layer superlattices from lattice mismatched materialsJournal of Applied Physics, 1982
- The solid helium pressure generation techniqueCryogenics, 1970
- Effect of Pressure on the Fermi Surface of BePhysical Review B, 1969