A dose rate independent pMOS dosimeter for space applications
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (6) , 2671-2678
- https://doi.org/10.1109/23.556852
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Investigation into the re-use of PMOS dosimetersIEEE Transactions on Nuclear Science, 1994
- New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)IEEE Transactions on Nuclear Science, 1992
- Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devicesIEEE Transactions on Nuclear Science, 1991
- Dual dielectric silicon metal-oxide-semiconductor field-effect transistors as radiation sensorsJournal of Applied Physics, 1989
- Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environmentsIEEE Transactions on Nuclear Science, 1988
- Experimental Determination of the Low-Energy Spectral Component of Cobalt-60 SourcesIEEE Transactions on Nuclear Science, 1985
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Correlating the Radiation Response of MOS Capacitors and TransistorsIEEE Transactions on Nuclear Science, 1984
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984
- Dosimetric Silica Films: The Influence of Fields on the Capture of Positive ChargeIEEE Transactions on Nuclear Science, 1982