Location of energy levels of oxygen-vacancy complex in GaAs
- 27 August 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (9) , 902-904
- https://doi.org/10.1063/1.103399
Abstract
Experimental results of photoexcitation and thermal deactivation of localized vibrational mode absorption of the oxygen-vacancy complex in GaAs are reported. Two levels within the energy gap are observed, one located at 0.14 eV and the other between 0.57 eV and 0.75 eV below the conduction-band minimum. It is proposed that this center exhibits a negative U property with the second electron ionization energy higher than that of the first electron.Keywords
This publication has 12 references indexed in Scilit:
- Fine structure of the oxygen-related local mode at 714 cm−1 in GaAsApplied Physics Letters, 1989
- Photosensitivity of the 714 and 730 cm−1 absorption bands in semi-insulating GaAs: Evidence for a deep donor involving oxygenApplied Physics Letters, 1989
- Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopyApplied Physics Letters, 1989
- Pair of local vibration mode absorption bands related to EL2 defects in semi-insulating GaAsApplied Physics Letters, 1987
- Optical and transient capacitance study of EL2 in the absence and presence of other midgap levelsJournal of Applied Physics, 1986
- Theory of Substitutional Deep Traps in Covalent SemiconductorsPhysical Review Letters, 1980
- Behavior of lattice defects in GaAsJournal of Physics and Chemistry of Solids, 1964
- Electron correlations in narrow energy bandsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1963
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961