Γ-X intervalley transfer in single AlAs barriers under hydrostatic pressure
- 19 April 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (16) , 1955-1957
- https://doi.org/10.1063/1.109502
Abstract
We have investigated the contribution of Γ‐X intervalley transfer to the tunneling current in single AlAs barrier heterostructures grown on a GaAs substrate by measuring I‐V characteristics at low temperature and under hydrostatic pressure up to 9 kbar. The application of hydrostatic pressure affects the contribution of the Γ‐X transfer process to the total tunneling current at a given bias voltage. Experimental results are compared with current‐voltage characteristics calculated with a model taking into account the Γ‐X transfer at heterointerfaces. Only transfer processes involving the longitudinal X valley in AlAs are considered in the calculations. Very good agreement is found for low bias conditions at all pressures.Keywords
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