Heat treatment effects on an In-GaAs ohmic contact
- 15 March 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (6) , 2011-2014
- https://doi.org/10.1063/1.341101
Abstract
Heat treatment effects on an In-GaAs ohmic contact are reported. Our finding is that the contact resistance of In to GaAs exhibits a practically insignificant increase after a heat treatment at a temperature of up to 900 °C. Results of secondary ion mass spectroscopy analysis show that the diffusion constant of In in GaAs is 3.3×10−5 exp(−1.9/kT) cm2/s. Moreover, a thermodynamic analysis gives the result that an InGaAs layer is formed between GaAs and In during the course of the heat treatment process. It is concluded from the above two analyses that the high stability of the contact resistance we have found is attributable to the low diffusion constant of In in GaAs and to the growth of an InGaAs interfacial layer.This publication has 12 references indexed in Scilit:
- Ohmic contacts to III–V compound semiconductors: A review of fabrication techniquesSolid-State Electronics, 1983
- Alloyed ohmic contacts to GaAsJournal of Vacuum Science and Technology, 1981
- Ohmic contacts to n-GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxyJournal of Vacuum Science and Technology, 1981
- Low temperature ohmic contacts to gallium arsenide using In and AlIEEE Transactions on Electron Devices, 1976
- Schottky barrier height of n-InxGa1−xAs diodesApplied Physics Letters, 1973
- Metallic contacts for gallium arsenideSolid-State Electronics, 1970
- Contact Resistances of Several Metals and Alloys to GaAsJournal of the Electrochemical Society, 1969
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967
- GaP-GaAs n-p Hetero junctionsPhysica Status Solidi (b), 1967
- Microwave phenomena in bulk GaAsIEEE Transactions on Electron Devices, 1966