B doping using B2H6 in gas source Si molecular beam epitaxy
- 6 May 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (18) , 1991-1993
- https://doi.org/10.1063/1.105042
Abstract
A new gas mixing system was devised for the control of a gaseous dopant during gas source Si molecular beam epitaxy. The performance of this gas mixing system was demonstrated using B2H6 gas dopant for B doping. B doping level control over five decades was successfully achieved. The B‐doping concentration was found to be proportional to the B2H6/Si2H6 flow rate ratio. This relationship holds in both the supply‐controlled and the reaction‐controlled growth regions. This result indicates that B2H6 is incorporated into epitaxial layers by a similar dissociative adsorption mechanism on Si2H6.Keywords
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