Ein Beitrag zur modellmäßigen Beschreibung des Dotanteneinbaus bei der einkristallinen Siliziumabscheidung aus der Gasphase
- 1 January 1978
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 13 (7) , 841-850
- https://doi.org/10.1002/crat.19780130719
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Equilibrium and kinetics in the chemical vapour deposition of siliconJournal of Crystal Growth, 1975
- Discussion of “The Incorporation of Phosphorus in Silicon Epitaxial Layer Growth” [J. Bloem, L. J. Gilling, and M. W. M. Graef (pp. 1354–1357, Vol. 121, No. 10)]Journal of the Electrochemical Society, 1975
- The Incorporation of Phosphorus in Silicon Epitaxial Layer GrowthJournal of the Electrochemical Society, 1974
- Doping of epitaxial siliconJournal of Crystal Growth, 1970
- Doping of Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1968