Multilayer model of indium arsenide epilayers
- 1 August 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 45 (1) , 135-140
- https://doi.org/10.1016/0040-6090(77)90214-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Charge carrier transport in gate-voltage-controlled heteroepitaxial indium arsenide layersThin Solid Films, 1977
- Compositional profile of heteroepitaxial InAs on GaAs substratesThin Solid Films, 1976
- Surface and bulk charge carrier transport in InAs epilayersC R C Critical Reviews in Solid State Sciences, 1975
- Static technique for precise measurements of surface potential and interface state density in MOS structuresApplied Physics Letters, 1975
- Transport coefficients of InAs epilayersApplied Physics Letters, 1974
- Heteroepitaxial InAs Grown on GaAs from Triethylindium and ArsineJournal of the Electrochemical Society, 1974
- Capacitance voltage measurements on n-type InAs MOS diodesSolid-State Electronics, 1971
- Preparation and properties of epitaxial InAsSolid-State Electronics, 1967
- Zum Mechanismus der Widerstandsänderung im MagnetfeldThe European Physical Journal A, 1952