M-plane GaN grown on γ-LiAlO2(100): nitride semiconductors free of internal electrostatic fields
- 28 June 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 227-228, 437-441
- https://doi.org/10.1016/s0022-0248(01)00739-4
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Growth of M-plane GaN(1
1 ̄ 00) on γ-LiAlOJournal of Crystal Growth, 2000 - Violet and blue emitting (In,Ga)N/GaN multiple quantum wells grown on γ-LiAlO2(100) by radio frequency plasma-assisted molecular beam epitaxyApplied Physics Letters, 1999
- Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxyJournal of Applied Physics, 1999
- Uniform multiatomic step arrays formed by atomic hydrogen assisted molecular beam epitaxy on GaAs (331) substratesApplied Physics Letters, 1998
- Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass SubstratesJapanese Journal of Applied Physics, 1997
- Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2MRS Internet Journal of Nitride Semiconductor Research, 1997
- Theory ofand () surfacesPhysical Review B, 1996
- Heteroepitaxy of gallium nitride on (0001), (012) and (100) sapphire surfacesJournal of Crystal Growth, 1994
- In situ scanning tunneling microscopy observation of surface morphology of GaAs(001) grown by molecular beam epitaxyApplied Physics Letters, 1992
- The crystal structure and anomalous dispersion of γ-LiAlO2Acta Crystallographica, 1965