Nickel Suilicide Phase Transformation during Post-Annealing and Related Schottky Characteristics
- 1 April 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (4R) , 734-735
- https://doi.org/10.1143/jjap.28.734
Abstract
Nickel silicide was formed by heat-treating Ni film on single-crystal Si. X-ray diffraction and resistivity measurements revealed that heat treatment at 300°C resulted in the formation of Ni-rich silicides, which were converted to NiSi during post-annealing above 400°C. Schottky barrier height of Ni silicide was examined in relation to phase differences. Barrier height was found to be unaffected by silicide phase.Keywords
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