Decomposition of trimethyl indium on Si (111)−7 × 7 studied with XPS, UPS and HREELS
- 31 August 1992
- journal article
- Published by Elsevier in Materials Letters
- Vol. 14 (4) , 207-213
- https://doi.org/10.1016/0167-577x(92)90158-g
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- SSIMS identification of surface intermediates in the thermal decomposition of TMGa on Si(100)Surface Science, 1992
- Adsorption and decomposition of trimethylgallium on Pt(111)Applied Surface Science, 1991
- Chapter 6 LP-MOCVD Growth, Characterization, and Application of InP MaterialPublished by Elsevier ,1990
- Interaction of trimethylaluminum with Ru(001)Surface Science, 1989
- Decomposition of trimethylaluminum on silicon(100)Chemistry of Materials, 1989
- The decomposition of triethylgallium on Si(100)Journal of Vacuum Science & Technology B, 1989
- Surface reactions of trimethylgallium and trimethylarsenic on silicon surfacesJournal of Vacuum Science & Technology B, 1989
- Decomposition of trimethylgallium on Si(100): Spectroscopic identification of the intermediatesSurface Science, 1989
- The mechanism of the growth of InP by MOCVD: A flow-tube investigation of the pyrolysis of the indium precursorJournal of Crystal Growth, 1984
- Thermal decomposition of metalorganic compounds used in the MOCVD of InPJournal of Crystal Growth, 1984