The X-valley transport in GaAs/AlAs triple barrier structures
- 15 June 1989
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (12) , 5199-5201
- https://doi.org/10.1063/1.343151
Abstract
Electron transport through the X valley of GaAs/AlAs triple‐barrier structures (TBS) grown by molecular‐beam epitaxy has been studied. Negative differential resistance is observed at 77 K in one type of TBS and is identified as the result of electron transport through both the Γ and X valleys of TBS. In another type of TBS, resonant tunneling through the X valley of GaAs/AlAs TBS is observed. The Γ and X energy‐band profiles under bias have been calculated in order to identify the observed features.This publication has 11 references indexed in Scilit:
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