A study of UV/Ozone cleaning procedure for silicon surfaces
- 16 September 1989
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 115 (1) , 223-227
- https://doi.org/10.1002/pssa.2211150124
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Thermal and Si-beam assisted desorption of SiO2 from silicon in ultrahigh vacuumJournal of Applied Physics, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopyApplied Physics A, 1986
- UV/ozone cleaning of surfacesJournal of Vacuum Science & Technology A, 1985
- Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon FilmsJapanese Journal of Applied Physics, 1985
- Silicon MBE: From strained-layer epitaxy to device applicationJournal of Crystal Growth, 1984
- UV ozone cleaning of silicon substrates in silicon molecular beam epitaxyApplied Physics Letters, 1984
- UV/Ozone Cleaning For Organics Removal On Silicon WafersPublished by SPIE-Intl Soc Optical Eng ,1984
- Etching of SiO2 Films by Si in Ultra-High VacuumJapanese Journal of Applied Physics, 1982
- Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy StudyJournal of the Electrochemical Society, 1972