Formation of ultrathin oxynitride layers on Si(100) by low-temperature electron cyclotron resonance N2O plasma oxynitridation process
- 1 July 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (4) , 2159-2164
- https://doi.org/10.1116/1.589845
Abstract
No abstract availableKeywords
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