200 A/cm/sup 2/ Threshold Current Density 1.5μm Gainas/aigainas Strained-layer Grin-sch Quantum Well Laser Diodes Grown By Omcvd
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. IIA_2-0_15
- https://doi.org/10.1109/drc.1991.664666
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Low-threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxyElectronics Letters, 1990
- Strained InGaAs/InP quantum well lasersApplied Physics Letters, 1990
- Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1989
- Very low threshold current density SCH-MQW laser diodes emitting at 1.55µmElectronics Letters, 1989