Gated photoluminescence method for interface state density determination
- 10 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (6) , 754-756
- https://doi.org/10.1063/1.106559
Abstract
We have investigated the use of gated photoluminescence (PL) to estimate interface state density in III–V metal-insulator-semiconductor (MIS) structures. Low-temperature PL measurements have been recorded as a function of bias applied to the semi-transparent gate of a MIS diode. An analysis of these data resulted in surface state densities in the low 1010/cm2 eV range on sulfur passivated SiO2 coated InP. The present technique is more sensitive than the conventional 1 MHz capacitance-voltage (C-V) method, and less dependent on low leakage currents in the dielectric, when compared to the quasi-static C-V technique.Keywords
This publication has 8 references indexed in Scilit:
- Role of polysulfides in the passivation of the InP surfaceApplied Physics Letters, 1991
- Kinetics of Low Pressure CVD Growth of SiO2 on InP and SiJournal of the Electrochemical Society, 1988
- Resonant hemispherical dielectric antennaElectronics Letters, 1984
- Surface Band Bending Effects on Photoluminescence Intensity in n-InP Schottky and MIS DiodesJapanese Journal of Applied Physics, 1981
- Energy and electric field dependence of Si-SiO2 interface state parameters by optically activated admittance experimentsJournal of Applied Physics, 1980
- Photoluminescence as a tool for the study of the electronic surface properties of gallium arsenideApplied Physics A, 1977
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962