Resonant magneto-polarons in bulk GaAs
- 31 March 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 57 (11) , 847-851
- https://doi.org/10.1016/0038-1098(86)90164-x
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Five-level k · p model for conduction electrons in GaAs. Description of cyclotron resonance experimentsSolid State Communications, 1985
- Energy levels of two- and three-dimensional polarons in a magnetic fieldPhysical Review B, 1985
- Resonant polaron coupling of the n = 1 Landau level and the 2p+ donor state in GaAsSolid State Communications, 1983
- Cyclotron resonance study of polarons in GaAsPhysical Review B, 1983
- Theory of intraband magnetoabsorption in weakly polar semiconductorsPhysical Review B, 1978
- Two-mode resonant polaron in the Hg0.72Cd0.28Te semiconductorSolid State Communications, 1978
- Precision verification of effective mass theory for shallow donors in GaAsSolid State Communications, 1971
- Theory of Resonant Coupling between Landau Levels and LO Phonons in Polar Semiconductors. I. Cyclotron Resonance and Transverse Magnetoresistance of InSbJournal of the Physics Society Japan, 1969
- MICROWAVE PERMITTIVITY OF THE GaAs LATTICE AT TEMPERATURES BETWEEN 100°K AND 600°KApplied Physics Letters, 1968
- Polaron Induced Anomalies in the Interband Magnetoabsorption of InSbPhysical Review Letters, 1966