GaAs double quantum well laser diode with short-period (AlGaAs)m(GaAs)n superlattice barriers
- 10 April 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (15) , 1388-1390
- https://doi.org/10.1063/1.100675
Abstract
A short‐period (AlGaAs)m(GaAs)n superlattice has been applied to the barrier layers in a single and a multiple quantum well structure prepared by molecular beam epitaxy in order to improve the interface quality. With a 38 Å thin GaAs quantum well without employing aluminum, a low threshold current density of 260 A/cm2, a high characteristic temperature (T0) of 205 K, and a high differential quantum efficiency of 75% have been achieved in a double quantum well ridge waveguide laser diode emitting at 780 nm.Keywords
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