Spatial Distributions of Individual Traps in a Si/SiO 2 Interface
- 1 March 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (3S)
- https://doi.org/10.1143/jjap.36.1380
Abstract
We have investigated individual traps in the Si/SiO2 interface by observing random telegraph signals (RTSs). The traps having energy levels within a few k B T of the Fermi level can capture or emit single electrons, and become sources of RTSs. We report the first investigation of spatial distributions of single-carrier traps in a MOSFET with a double gate structure. We observe RTSs with changing bias voltages on two lower gates, and show that their variations describe the spatial distributions of the individual traps.Keywords
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