Si doping efficiency in GaAs grown at low temperatures
- 17 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (24) , 2818-2820
- https://doi.org/10.1063/1.104746
Abstract
The doping efficiency of Si (≡[e−]/[Si]) has been measured as a function of substrate temperature Ts, beam-equivalent As4-to-Ga fluence ratio R, and beam supply conditions to probe the kinetic limitations of low-temperature GaAs homoepitaxy. The doping efficiency decreases strongly with increasing R at low Ts due, we suggest, to electron trapping at defects caused by excess As incorporation.Keywords
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