Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films

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Abstract
The influence of thin native oxide films (∼25 Å) on the annealing behavior of As and Ga implanted in Si has been studied. Although no implanted As evaporated from the solids into the ambient atmosphere during annealing, the amount of implanted As diffusing from the Si into the native-oxide films increased with the annealing temperature to 2×1014 cm-2 at a dose of 1×1016 cm-2 at an annealing temperature of 1100°C. On the other hand, the amount of implanted Ga evaporating from the solids into the ambient atmosphere increased exponentially with the annealing temperature; the amount of implanted Ga remaining in the Si was only 7% of the dose of 1×1015 cm-2 at an annealing temperature of 1100°C.