A simple expression for ECL propagation delay including non-quasi-static effects
- 1 March 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (3) , 391-396
- https://doi.org/10.1016/0038-1101(93)90092-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Transistor design for predictable power gain at maximum frequencyIEEE Transactions on Electron Devices, 1992
- The general transient charge control relation: a new charge control relation for semiconductor devicesIEEE Transactions on Electron Devices, 1991
- An appropriate device figure of merit for bipolar CMLIEEE Electron Device Letters, 1991
- Accurate analytical delay expressions for ECL and CML circuits and their applications to optimizing high-speed bipolar circuitsIEEE Journal of Solid-State Circuits, 1990
- An analytical model for the determination of the transient response of CML and ECL gatesIEEE Transactions on Electron Devices, 1990
- A propagation-delay expression and its application to the optimization of polysilicon emitter ECL processesIEEE Journal of Solid-State Circuits, 1988
- Non-quasi-static small-signal models for semiconductor junction diodes with extensions for transistorsSolid-State Electronics, 1987
- The transient integral charge control relation—A novel formulation of the currents in a bipolar transistorIEEE Transactions on Electron Devices, 1987
- Extended charge-control model for bipolar transistorsIEEE Transactions on Electron Devices, 1973
- P-N-I-P and N-P-I-N Junction Transistor TriodesBell System Technical Journal, 1954