Formation of island chains in SiGe/Si heteroepitaxy by elastic anisotropy
- 28 November 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 64 (24) , 245307
- https://doi.org/10.1103/physrevb.64.245307
Abstract
In LPE-grown semiconductor samples the formation of self-assembled nanoscale island chains along the elastically soft directions can be observed. We explain this process of self-organization by a kinetic Monte Carlo simulation of the Stranski-Krastanow growth mode, incorporating in a self-consistent way the anisotropic strain field around the nanoscale islands.
Keywords
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