Imaging charge-coupled device (CCD) transient response to 17 and 50 MeV proton and heavy-ion irradiation
- 1 December 1990
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 37 (6) , 1876-1885
- https://doi.org/10.1109/23.101204
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Characterization of multiple-bit errors from single-ion tracks in integrated circuitsIEEE Transactions on Nuclear Science, 1989
- The space radiation environment for electronicsProceedings of the IEEE, 1988
- Lateral charge transport from heavy-ion tracks in integrated circuit chipsIEEE Transactions on Nuclear Science, 1988
- A 1.4-million-element CCD image sensorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- A 1.4 million element, full frame CCD image sensor with vertical overflow drain for anti-blooming and low color crosstalkPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Evaluation of a virtual phase charged-coupled device as an imaging x-ray spectrometerReview of Scientific Instruments, 1983
- Modeling diffusion and collection of charge from ionizing radiation in silicon devicesIEEE Transactions on Electron Devices, 1979
- Cosmic Ray Induced in MOS Memory CellsIEEE Transactions on Nuclear Science, 1978