Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation
- 1 August 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (8R)
- https://doi.org/10.1143/jjap.26.1324
Abstract
The diffusion profiles of buried Be and Si doped by focused ion beam (FIB) implantation in GaAs after annealing were investigated. The diffusion coefficients of Be and Si were determined by fitting from the results of computer calculations. The diffusion coefficient of FIB-doped Be was enhanced by excess interstitial Be. Beryllium diffusion profiles expand by annealing with a high dose at 850°C. The concentration-dependent diffusion of Si in GaAs doped using a molecular beam was observed. The diffusion coefficient of Si heavily doped by FIB, however, was undetectably small in contrast with that of Be at 850°C.Keywords
This publication has 10 references indexed in Scilit:
- Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1985
- Control of Be diffusion in molecular beam epitaxy GaAsApplied Physics Letters, 1985
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion ImplanterJapanese Journal of Applied Physics, 1984
- Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and modelApplied Physics Letters, 1984
- Selective Si and Be implantation in GaAs using a 100 kV mass-separating focused ion beam system with an Au–Si–Be liquid metal ion sourceJournal of Vacuum Science & Technology B, 1983
- Study of Encapsulants for Annealing Si‐Implanted GaAsJournal of the Electrochemical Society, 1982
- Models for computer simulation of complete IC fabrication processIEEE Transactions on Electron Devices, 1979
- Annealing studies of Be-doped GaAs grown by molecular beam epitaxyApplied Physics Letters, 1978
- Electrical profiling and optical activation studies of Be-implanted GaAsJournal of Applied Physics, 1977
- Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1977