Investigation of high-current effects on the current gain of AlxGa1−xAs/GaAs/GaAs abrupt heterojunction bipolar transistors
- 28 February 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (2) , 169-174
- https://doi.org/10.1016/0038-1101(89)90185-8
Abstract
No abstract availableKeywords
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