Photopumped long wavelength vertical-cavity surface-emitting lasers using strain-compensated multiple quantum wells
- 20 June 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (25) , 3395-3397
- https://doi.org/10.1063/1.111286
Abstract
We report optically pumped long wavelength vertical‐cavity surface‐emitting lasers (VCSELs) made of strain‐compensated multiple quantum wells. The structure of the VCSELs consists of 30 pairs of compressive strained wells and tensile strained barriers as the gain medium and Si/SiO2 dielectric mirrors. The lasers operate at 1.59 μm wavelength. The threshold power density was measured to be 3 kW/cm2 at room temperature, corresponding to a threshold current density of about 2 kA/cm2. The VCSELs have a characteristic temperature T0 of 90 K between 10 and 60 °C, and 60 K from 70 to 110 °C.Keywords
This publication has 12 references indexed in Scilit:
- Low threshold, wafer fused long wavelength vertical cavity lasersApplied Physics Letters, 1994
- Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substratesApplied Physics Letters, 1991
- Strain-compensated strained-layer superlattices for 1.5 μm wavelength lasersApplied Physics Letters, 1991
- Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence-band mixing effectsApplied Physics Letters, 1990
- 90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 µm diameter core silica fibreElectronics Letters, 1990
- Room-temperature photopumped operation of an InGaAs-InP vertical cavity surface-emitting laserApplied Physics Letters, 1990
- InGaAsP(1.3 μm)/InP vertical-cavity surface-emitting laser grown by metalorganic vapor phase epitaxyApplied Physics Letters, 1990
- Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodesElectronics Letters, 1989
- Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laserApplied Physics Letters, 1989
- Band structure engineering of semiconductor lasers for optical communicationsJournal of Lightwave Technology, 1988