P-type doping of double layer mercury cadmium telluride for junction formation
- 1 May 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (5) , 617-624
- https://doi.org/10.1007/bf02657970
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Planar p-on-n HgCdTe heterostructure photovoltaic detectorsApplied Physics Letters, 1993
- As diffusion in Hg1-xCdxTe for junction formationSemiconductor Science and Technology, 1993
- Diffusion of As and Sb in HgCdTeJournal of Crystal Growth, 1992
- MOVPE growth of HgCdTeSemiconductor Science and Technology, 1991
- Dynamics of arsenic diffusion in metalorganic chemical vapor deposition HgCdTe on GaAs/Si substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Diffusion of arsenic in epitaxial CdxHg1−xTeJournal of Crystal Growth, 1990
- Kinetics of silicon-induced mixing of AlAs-GaAs superlatticesApplied Physics Letters, 1987
- p on n ion-implanted junctions in liquid phase epitaxy HgCdTe layers on CdTe substratesApplied Physics Letters, 1987
- Liquid-Phase Epitaxy of Hg1−xCdxTe from Hg Solution: A Route to Infrared Detector StructuresMRS Proceedings, 1986
- Mode of incorporation of phosphorus in Hg0.8Cd0.2TeJournal of Applied Physics, 1983